NEC Electronics · 2081 · Question 2

E-MOSFET drain current in saturation (ignore channel-length modulation):

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AId = (1/2) µn Cox (W/L) (VGS - VTH)^2
BId = K VDS (VGS - VTH) - (1/2) K VDS^2
CId = VGS / RDS
DId = β (VGS - VTH) VDS
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E-MOSFET drain current in saturation (ignore channel-length modulation): | NEC Electronics | License Prep